MJD112RLG(2011) 查看數據表（PDF） - ON Semiconductor
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MJD112RLG Datasheet PDF : 8 Pages
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MJD112 (NPN) MJD117 (PNP)
NPN MJD112
PNP MJD117
+ 0.8
*APPLIED FOR IC/IB < hFE/3
0
- 0.8
- 1.6
- 2.4 *qVC FOR VCE(sat)
- 3.2
qVC FOR VBE
- 4
25°C TO 150°C
- 55°C TO 25°C
25°C TO 150°C
- 55°C TO 25°C
+ 0.8
*APPLIES FOR IC/IB < hFE/3
0
25°C TO 150°C
- 0.8
- 1.6 *qVC FOR VCE(sat)
- 2.4
- 3.2
- 4 qVB FOR VBE
- 55°C TO 25°C
25°C TO 150°C
- 55°C TO 25°C
- 4.8
- 4.8
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. Temperature Coefficients
105
REVERSE
104
FORWARD
105
REVERSE
104
FORWARD
103
VCE = 30 V
103
VCE = 30 V
102
TJ = 150°C
101
100
100°C
102
TJ = 150°C
101
100°C
100
25°C
10-1
- 0.6 - 0.4
25°C
- 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
+ 1.2 + 1.4
10-1
+ 0.6 + 0.4 + 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
- 1.2 - 1.4
Figure 11. Collector Cut−Off Region
PNP
COLLECTOR
NPN
COLLECTOR
BASE
BASE
≈ 8 k ≈ 120
≈ 8 k ≈ 120
EMITTER
Figure 12. Darlington Schematic
EMITTER
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