MJD112T4 查看數據表（PDF） - Motorola => Freescale

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MJD112T4

Complementary Darlington Power Transistors

Motorola => Freescale 

NPN MJD112

MJD112 MJD117

PNP MJD117

+ 0.8

*APPLIED FOR IC/IB < hFE/3

0

– 0.8

– 1.6

– 2.4 *θVC FOR VCE(sat)

– 3.2

θVC FOR VBE

–4

25°C TO 150°C

– 55°C TO 25°C

25°C TO 150°C

– 55°C TO 25°C

+ 0.8

*APPLIES FOR IC/IB < hFE/3

0

25°C TO 150°C

– 0.8

– 1.6 *θVC FOR VCE(sat)

– 2.4

– 3.2

– 4 θVB FOR VBE

– 55°C TO 25°C

25°C TO 150°C

– 55°C TO 25°C

– 4.8

0.04 0.06 0.1 0.2

0.4 0.6 1

2

4

IC, COLLECTOR CURRENT (AMP)

– 4.8

0.04 0.06 0.1

0.2

0.4 0.6 1

2

4

IC, COLLECTOR CURRENT (AMP)

Figure 10. Temperature Coefficients

105

REVERSE

104

FORWARD

105

REVERSE

104

FORWARD

103

VCE = 30 V

103

VCE = 30 V

102

TJ = 150°C

101

100

100°C

102

TJ = 150°C

101

100°C

100

25°C

10–1

– 0.6 – 0.4

25°C

– 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1

VBE, BASE–EMITTER VOLTAGE (VOLTS)

+ 1.2 + 1.4

10–1

+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1

VBE, BASE–EMITTER VOLTAGE (VOLTS)

– 1.2 – 1.4

Figure 11. Collector Cut–Off Region

PNP

COLLECTOR

NPN

COLLECTOR

BASE

BASE

≈ 8 k ≈ 120

≈ 8 k ≈ 120

EMITTER

Figure 12. Darlington Schematic

EMITTER

Motorola Bipolar Power Transistor Device Data

5

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