Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High voltage ,high speed
·Improved efficiency due to low base
drive requirements:
-High and flat DC current gain hFE
-Fast switching
APPLICATIONS
·Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
IB
Base current
IBM
Base current-Peak
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
Rth j-A
Thermal resistance junction to ambient
JMnic
www.jmnic.com
MJE18006
·
VALUE
1000
450
9
6
15
4
8
100
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
MAX
1.25
62.5
UNIT
℃/W
℃/W