MJE2955T 查看數據表（PDF） - Inchange Semiconductor
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MJE2955T Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
MJE2955T
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0
-60
V
VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
-1.1
V
VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-3.3A
-8.0
V
VBE
Base-emitter on voltage
IC=-4A ; VCE=-4V
-1.8
V
ICEO
Collector cut-off current
VCE=-30V; IB=0
-0.7 mA
ICEX
Collector cut-off current
ICBO
Collector cut-off current
VCE=-70V; VBE(off)=-1.5V
TC=150℃
VCB=-70V; IE=0
TC=150℃
-1.0
-5.0
mA
-1.0
-10
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5.0 mA
固IN电C半H导AN体GE SEMICONDUCTOR hFE-1
hFE-2
fT
DC current gain
DC current gain
Transition frequency
IC=-4A ; VCE=-4V
20
100
IC=-10A ; VCE=-4V
5.0
IC=-0.5A ; VCE=-10V
2.0
MHz
2
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