MJE2955T 查看數據表（PDF） - Unisonic Technologies

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MJE2955T

PNP SILICON TRANSISTOR(HIGH VOLTAGE TRANSISTOR)

Unisonic Technologies 

MJE2955T

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

70

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5

V

Collector current

IC

10

A

Base Current

IB

Total Power Dissipation (Ta=25°C)

PC

6

A

75

W

Junction Temperature

TJ

125

°C

Operating Temperature

TOPR

-20 ~ +85

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0°C ~70°C

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Emitter Breakdown Voltage

BVCEO

IC=200mA

Collector-Base Breakdown Voltage

VBCBO

IC=10mA

Emitter-Base Breakdown Voltage

BVEBO

IE=10mA

Collector Cut-Off Current

ICBO

ICEO

VCB=70V

VCE=30V

ICEX

VCE=70V, VEB(OFF)=1.5V

Emitter Cut-Off Current

IEBO

VEB=5V

Collector-Emitter Saturation Voltage

VCE(SAT)1

VCE(SAT)2

IC=4A, IB=0.4A

IC=10A, IB=3.3A

Baser-Emitter on Voltage

VBE(ON)

VCE=4V, IC=4A

DC Current Gain

hFE1

hFE2

IC=4A, VCE=4V

IC=10A, VCE=4V

Current Gain Bandwidth Product

fT

VCE=10V, IC=0.5A, f=1MHz

MIN TYP MAX UNIT

60

V

70

V

5

V

1 mA

700 μA

1 mA

5 mA

1.1 V

8.0

1.8 V

20

100

5

2

MHZ

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2

QW-R203-012,C

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