MJE703 查看數據表（PDF） - Inchange Semiconductor
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MJE703 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJE703
DESCRIPTION
·Collector–Emitter Sustaining Voltage—
: VCEO(SUS) = -80 V
·DC Current Gain—
: hFE = 750(Min) @ IC= -2 A
= 100(Min) @ IC= -4A
·Complement to Type MJE803
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
IBB
Base Current
Collector Power Dissipation
PC
TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
-1
A
40
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case 3.13 ℃/W
isc Website：www.iscsemi.cn
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