MMBD1203 查看數據表（PDF） - Fairchild Semiconductor

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MMBD1203

High Conductance Ultra Fast Diode

Fairchild Semiconductor 

Discrete POWER & Signal

Technologies

MMBD1201 / 1203 / 1204 / 1205

3

SOT-23

3

24

1

2

2

1

MARKING

MMBD1201 24 MMBD1204A 27

MMBD1203 26 MMBD1205A 28

CONNECTION DIAGRAMS

1201

3

3

1203

1

1204

2 NC

3

1

2

3

1205

1

2

1

2

High Conductance Ultra Fast Diode

Sourced from Process 1P.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

W IV

IO

IF

if

if(surge)

Tstg

TJ

Working Inverse Voltage

Average Rectified Current

DC Forward Current

Recurrent Peak Forward Current

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

Storage Temperature Range

Operating Junction Temperature

50

200

600

700

1.0

2.0

-55 to +150

150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

V

mA

mA

mA

A

A

°C

°C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

PD

Total Device Dissipation

Derate above 25°C

RθJA

Thermal Resistance, Junction to Ambient

MMBD1201/1203/1204/1205*

350

2.8

357

*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2

Units

mW

mW /°C

°C/W

ã 1997 Fairchild Semiconductor Corporation

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