MMBF2202PT1(2003) 查看數據表（PDF） - ON Semiconductor
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MMBF2202PT1 Datasheet PDF : 6 Pages
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MMBF2202PT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
V(BR)DSS
20
IDSS
−
−
IGSS
−
VGS(th)
1.0
rDS(on)
−
−
gFS
−
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 3.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −15 Vdc,
RL = 75 Ω, ID = 200 mAdc,
VGEN = −10 V, RG = 6.0 Ω)
Gate Charge (See Figure 5)
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
td(on)
−
tr
−
td(off)
−
tf
−
QT
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
−
Pulsed Current
ISM
−
Forward Voltage (Note 3.)
VSD
−
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
−
−
Vdc
µAdc
−
1.0
−
10
−
±100
nAdc
1.7
2.4
Vdc
Ohms
1.5
2.2
2.0
3.5
600
−
mMhos
50
−
pF
45
−
20
−
2.5
−
ns
1.0
−
16
−
8.0
−
2700
−
pC
−
0.3
A
−
0.75
1.5
−
V
TYPICAL CHARACTERISTICS
10
8
ID = 200 mA
6
4
2
0
01
234 56 78
VGS, GATE−SOURCE VOLTAGE (VOLTS)
9 10
Figure 1. On Resistance versus Gate−Source Voltage
4.0
3.5
VGS = 4.5 V
3.0
ID = 50 mA
2.5
2.0
1.5
VGS = 10 V
ID = 200 mA
1.0
0.5
0
−40 −20 0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 2. On Resistance versus Temperature
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