MRF8372R1 查看數據表（PDF） - Motorola => Freescale

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MRF8372R1

NPN SILICON RF LOW POWER TRANSISTOR 750 mW, 870 MHz

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 5.0 mAdc, IB = 0)

V(BR)CEO

16

—

—

Vdc

Collector–Emitter Breakdown Voltage

(IC = 5.0 mAdc, VBE = 0)

V(BR)CES

36

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V(BR)EBO

4.0

—

—

Vdc

Collector Cutoff Current

(VCE = 15 Vdc, VBE = 0, TC = 25°C)

ICES

—

—

0.1

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 50 mAdc, VCE = 10 Vdc)

hFE

30

90

200

—

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

1.8

2.5

pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)

Gpe

8.0

10

—

dB

Collector Efficiency

(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)

η

55

60

—

%

MRF8372R1, R2

2

MOTOROLA RF DEVICE DATA

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