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MTD20N06HDL Datasheet PDF : 8 Pages
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MTD20N06HDL
Preferred Device
Power MOSFET
20 Amps, 60 Volts, Logic Level
N−Channel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low−voltage, high−speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits, and
inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched, and to offer additional safety margin against unexpected
voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Pb−Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous @ 25°C
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 ms)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C (Note 1)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
60
Vdc
60
Vdc
± 15 Vdc
± 20 Vpk
20
Adc
12
60
Apk
40
0.32
1.75
−55 to
150
W
W/°C
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 20 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
mJ
200
°C/W
RJC
3.13
RJA
100
RJA
71.4
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR−4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
http://onsemi.com
20 AMPERES, 60 VOLTS
RDS(on) = 45 mW
N−Channel
D
G
S
MARKING DIAGRAM & PIN ASSIGNMENTS
4
12
3
DPAK
CASE 369C
STYLE 2
Gate 1
Drain 2
YWW
20N
06HLG
Source 3
4
Drain
Y
WW
20N06HL
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MTD20N06HDL
DPAK
75 Units/Rail
MTD20N06HDLT4 DPAK 2500 Tape & Reel
MTD20N06HDLT4G DPAK 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 6
Publication Order Number:
MTD20N06HDL/D
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