MTP50P03HDLG 查看數據表（PDF） - ON Semiconductor
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MTP50P03HDLG Datasheet PDF : 8 Pages
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MTP50P03HDL
TYPICAL ELECTRICAL CHARACTERISTICS
100
TJ = 25°C
80
60
VGS = 10 V
5V
8V
4.5 V
6V
4V
3.5 V
40
20
3V
2.5 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
100
VDS ≥ 10 V
80
TJ = − 55°C
25°C
100°C
60
40
20
0
1.5 1.9
2.3
2.7
3.1
3.5
3.9
4.3
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.029
VGS = 5.0 V
0.027
0.025
0.023
0.021
TJ = 100°C
25°C
0.019
0.017
− 55°C
0.015
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.022
TJ = 25°C
0.021
VGS = 5 V
0.020
0.019
0.018
0.017
10 V
0.016
0.015
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.35
VGS = 5 V
ID = 25 A
1.25
1.15
1.05
1000
VGS = 0 V
100
TJ = 125°C
0.95
0.85
− 50 − 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100°C
10
0
5
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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