NE34018-A 查看數據表（PDF） - California Eastern Laboratories.

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NE34018-A

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

California Eastern Laboratories. 

GaAs HJ-FET L TO S BAND

LOW NOISE AMPLIFIER NE34018

(New Plastic Package)

FEATURES

• LOW COST MINIATURE PLASTIC PACKAGE

(SOT-343)

• LOW NOISE FIGURE:

0.6 dB typical at 2 GHz

• HIGH ASSOCIATED GAIN:

16.0 dB typical at 2 GHz

• LG = 0.6 µm, WG = 400 µm

• TAPE & REEL PACKAGING

DESCRIPTION

NEC's NE34018 is a low cost gallium arsenide Hetero-Junc-

tion FET housed in a miniature (SOT-343) plastic surface

mount package. The device is fabricated using ion implanta-

tion for improved RF and DC performance, reliability, and

uniformity. Its low noise figure, high gain, small size and

weight make it an ideal low noise amplifier transistor in the 1-

3 GHz frequency range. The NE34018 is suitable for GPS,

PCS, WLAN, MMDS, and other commercial applications.

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

VDS = 3 V, IDS = 20 mA

4

25

20

GA

3

15

10

2

5

0

1

NF

0

0.5

1

2 3 4 5 6 7 8 910

Frequency, f (GHz)

18 Package

SOT-343 Style

ELECTRICAL CHARACTERISTICS (TA = 25°C)

SYMBOL

PART NUMBER

PACKAGE OUTLINE

PARAMETERS AND CONDITIONS

UNITS

NE34018

18

MIN

TYP

MAX

NF

Noise Figure at VDS = 2 V, ID = 5 mA, f = 2 GHz

dB

0.6

1.0

GA

Associated Gain at VDS = 2 V, ID = 5 mA, f = 2 GHz

dB

14.0

16.0

P1dB

Output Power at 1 dB Gain Compression Point, f = 2 GHz

VDS = 2 V, IDS = 10 mA

VDS = 3 V, IDS = 30 mA

dBm

dBm

12

16.5

G1dB

Gain at P1dB, f = 2 GHz

VDS = 2 V, IDS = 10 mA

VDS = 3 V, IDS = 30 mA

dB

17.0

dB

17.5

O/P IP3

Output IP3 at f = 2 GHz, ∆f = 1 MHz

VDS = 2 V, IDS = 10 mA

VDS = 2 V, IDS = 30 mA

dBm

23

dBm

32

IDSS

Saturated Drain Current at VDS = 2 V, VGS = 0 V

mA

30

80

120

VP

Pinch Off Voltage at VDS = 2 V, ID = 100 µA

V

-2.0

-0.8

-0.2

gm

Transconductance at VDS = 2 V, ID = 5 mA

mS

30

IGSO

Gate to Source Leakage Current at VGS = -3 V

µA

0.5

10

RTH(CH-A)

Thermal Resistance (Channel to Ambient)

˚C/W

833

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production

line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.

California Eastern Laboratories

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