RGP02-12E 查看數據表（PDF） - Galaxy Semi-Conductor
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RGP02-12E Datasheet PDF : 2 Pages
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RATINGS AND CHARACTERISTIC CURVES RGP02-12E(Z)---RGP02-20E(Z)
FIG.1 -- REVERSE RECORERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50Ω
10Ω
trr
N.1.
N.1.
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1Ω
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
NOTES:1.RISETIME=75ns MAX. INPUTIMPEDANCE=1MΩ.22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5OΩ
-1.0A
SETTIMEBASEFOR50/100 ns /cm
FIG.2 --DERATING DURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 --MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
6
Single Phase
Half Wave 60H Z
0.5
Resistive or
Inductive Load
0.4
0.3
0.2
0.1
0
0
25 50 75 100 125 150 175
25
20
TJ=25℃
8.3ms Single Half
15
Sine-Wave
10
5
0
12
4 6 10 20 40 60 100
AMBIENT TEMPERATURE,℃
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
FIG.5--TYPICAL REVERSE CHARACTERISTICS
10
2.0
1.0
TJ-25℃
1.0
0.1
TJ=25℃
PULSE WIDTH=300μs
0.01
2%DUTY CYCLE
0.1
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
FORWARD VOLTAGE,VOLTS
TJ-100℃
0.01
0 20 40 60 80 100 120 140
PERCENT OF FATED REVERSEVOLTAGE,%
Document Number 0261072
BLGALAXY ELECTRICAL
www.galaxycn.com
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