SIW3500GIG1 查看數據表（PDF） - RF Micro Devices

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产品描述 (功能)

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SIW3500GIG1

ULTIMATEBLUE

RF Micro Devices 

SiW3500

Preliminary

System Specifications

Absolute Maximum Ratings

Parameter

Description

Min

Max

VDD_C

Digital circuit supply voltage

-0.3

3.63

VCC

Analog circuit supply voltage

-0.3

3.63

VDD_P, VDD_P_ALT I/O supply voltage

-0.3

3.63

VBATT_ANA

Analog regulator supply voltage

-0.3

3.63

VBATT_DIG

Digital regulator supply voltage

-0.3

3.63

TST

Storage temperature

-55

+125

RFMAX

Maximum RF input level

–

+5

Note: Absolute maximum ratings indicate limits beyond which the useful life of the device may be impaired or damage may occur.

Unit

V

V

V

V

V

°C

dBm

Recommended Operating Conditions

Parameter

Description

Min

Max

Unit

TOP

Operating temperature (industrial grade)

-40

+85

°C

TEOP

Extended operating temperature1

-40

+105

°C

VBATT_ANA

Unregulated supply voltage into internal analog regulator

2.3

3.63

V

VBATT_DIG

Unregulated supply voltage into internal digital regulator

2.3

3.63

V

VCC

Regulated supply voltage directly into analog circuits

1.71

1.89

V

VDD_C

Regulated supply voltage directly into digital circuits

1.62

1.98

V

VDD_P , VDD_P_ALT Digital interface I/O supply voltage

1.62

3.63

V

1.The extended operating temperature range applies to special order devices qualified for extended operating range. Please contact factory for details.

ESD Rating

Symbol

Description

Rating

ESD

ESD protection - all pins

2000 V

Note: This device is a high performance RF integrated circuit with an ESD rating of 2,000 volts (HBM conditions per Mil-Std-883, Method 3015).

Handling and assembly of this device should only be done using appropriate ESD controlled processes.

Electrical Characteristics

DC Specification (TOP=+25°C, VDD_P=3.0V)

Symbol

Description

VIL

Input low voltage

VIH

Input high voltage

VOL

Output low voltage

VOH

Output high voltage

IOH

Output high current

IOL

Output low current

IILI

Input leakage current

Min.

GND - 0.1

0.7. VDD_P

GND

0.8 . VDD_P

–

–

–

Typ

–

–

–

–

1

1

1

Max.

0.3 . VDD_P

VDD_P

0.2 . VDD_P

VDD_P

–

–

–

Unit

V

V

V

V

mA

mA

µA

AC Characteristics (TOP=+25°C, VDD_P=3.0V, CLOAD=15pF)

Symbol

Description

tr

Rise time

tf

Fall time

Typ

Max.

Unit

5

11

ns

5

8

ns

14-46

60 0066 R00Hrf SiW3500 Radio Processor DS

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