SIW3500GIG1 查看數據表（PDF） - RF Micro Devices
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SIW3500GIG1 Datasheet PDF : 18 Pages
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Preliminary
SiW3500
Parameter
Description
Min
Typ
Max
Out-of-band
spurious
emission
30 MHz to 1GHz, operating mode
30 MHz to 1GHz, idle mode
1 GHz to 12.75 GHz, operating mode
1 GHz to 12.75 GHz, idle mode
1.8 GHz to 1.9 GHz
–
–
-55
–
–
-57
–
-70
-50
–
–
-47
–
–
-62
5.15 GHz to 5.3 GHz
–
–
-47
1. Measured into the chip with 50 Ω impedance and no bandpass filter. Industrial temperature performance guaranteed by design.
2. The modulation characteristic is measured as per test TRM/CA/07/C defined in the Bluetooth Test Specification.
Unit
dBm
dBm
dBm
dBm
dBm
dBm
Analog Voltage Supply Requirements
The SiW3500 processor is designed for use with its own internal low noise analog voltage regulator. This configuration is
recommended for all applications. When necessary, the internal analog regulator can be bypassed. In situations where
bypassing the internal analog regulator is required, the supply voltage to the analog circuit must satisfy the following
requirements to preserve the RF performance characteristics.
Parameter
VCC
Minimum
load current
Minimum
ripple rejection
Output noise
Description
Analog supply voltage to all VCC input pins
External regulator current
At 400Hz
Integrated 10 Hz to 80 kHz noise
Min
Max
Unit
1.71
1.89
V
80
–
mA
40
–
dB
–
22
mV RMS
External Reference Requirements
It is possible to provide a number of reference frequencies that are typical in most cellular phones directly into ball B7
(XTAL_P/CLK) of the device. Refer to “System Reference Clock” on page 41 for a list of supported reference
frequencies.
Parameter
Phase noise
Drive level
100 Hz offset
1 kHz offset
10 kHz offset
AC amplitude
DC levela
Description
a.If DC-coupled, the external reference signal voltage must stay within this range at all times.
Min
Max
Unit
–
-100
dBc/Hz
–
-120
dBc/Hz
–
-140
dBc/Hz
0.5
VCC
VP-P
0.3
VCC
V
Reference Crystal Requirements
Many reference frequencies are supported by the device. If a crystal is used as the reference frequency source, the
typical required parameters are listed below:
Parameter
Drive level
ESR
CO
CL
CM
Description
–
Effective serial resistance1
Holder capacitance2
Load capacitance3
Motional capacitance
Min
Typ
Max
Unit
–
–
0.3
mW
–
–
150
Ω
–
3
5
pF
–
12
18
pF
–
6
–
fF
1. For 32 MHz crystal.
2. If DC-coupled, the external reference signal voltage must stay within this range at all times.
3. The actual values for CO and CL are dependent on the crystal manufacturer and can be compensated for by an internal crystal calibration
capability.
60 0066 R00Hrf SiW3500 Radio Processor DS
14-49
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