TIC216M 查看數據表（PDF） - Bourns, Inc
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TIC216M Datasheet PDF : 3 Pages
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TIC216 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Gate trigger
VGT
voltage
VT
On-state voltage
IH
Holding current
IL
dv/dt
dv/dt(c)
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
IT = ±8.4 A
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = -12 V†
VDRM = Rated VDRM
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
IG = 50 mA
IG = 0
IG = 0
(see Note 6)
IG = 0
VDRM = Rated VDRM ITRM = ±8.4 A
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
(see Note 5)
Init’ ITM = 100 mA
Init’ ITM = -100 mA
TC = 110°C
TC = 70°C
2.2
-2.2
-2.2
3
±1.7
30
-30
4
-2
±20
V
V
mA
mA
V/µs
±2
±5
V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.5 °C/W
62.5 °C/W
PRODUCT INFORMATION
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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