TIP107G(2019) 查看數據表（PDF） - ON Semiconductor

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TIP107G
(Rev.:2019)

Complementary Silicon Transistors, Plastic, Medium-Power

ON Semiconductor 

Complementary Silicon

Transistors, Plastic,

Medium-Power

TIP100, TIP101, TIP102

(NPN); TIP105, TIP106,

TIP107 (PNP)

Designed for general−purpose amplifier and low−speed switching

applications.

Features

• High DC Current Gain −

hFE = 2500 (Typ) @ IC

= 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105

= 80 Vdc (Min) − TIP101, TIP106

= 100 Vdc (Min) − TIP102, TIP107

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC

= 3.0 Adc

= 2.5 Vdc (Max) @ IC = 8.0 Adc

• Monolithic Construction with Built−in Base−Emitter Shunt Resistors

• These Devices are Pb−Free and are RoHS Compliant

www.onsemi.com

DARLINGTON 8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100 VOLTS, 80 WATTS

MARKING

DIAGRAM

1

2

3

4

TO−220AB

CASE 221A

STYLE 1

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TIP10xG

AYWW

TIP10x

x

A

Y

WW

G

= Device Code

= 0, 1, 2, 5, 6, or 7

= Assembly Location

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information on page 3 of

this data sheet.

© Semiconductor Components Industries, LLC, 2014

1

November, 2019 − Rev. 15

Publication Order Number:

TIP100/D

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