VG26S17405J-6 查看數據表（PDF） - Vanguard International Semiconductor

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VG26S17405J-6

4,194,304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor 

VIS

•Early Write Cycle

RAS

CAS

ADDRESS

tRC

t RAS

tCSH

tRCD

tT

tRSH

tCAS

tASR

tRAD

tRAH

Row

tRAL

tASC

tCAH

tRAL

Column

WE

DQ1~DQ4

tWCS

t WCH

tDS

tDH

DIN

VG26(V)(S)17405FJ

4,194,304 x 4 - Bit

CMOS Dynamic RAM

tRP

tCRP

tCPN

Document:1G5-0162

Rev.1

Page 16

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