VT5200-E3/4W(2009) 查看數據表（PDF） - Vishay Semiconductors
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VT5200-E3/4W Datasheet PDF : 5 Pages
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New Product
VT5200, VFT5200, VBT5200, VIT5200
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
IR = 1.0 mA
IF = 2.5 A
IF = 5.0 A
IF = 2.5 A
IF = 5.0 A
Reverse current
VR = 180 V
VR = 200 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
200 (minimum)
0.81
1.10
0.58
0.65
1.7
1.8
-
2.5
MAX.
-
-
1.60
-
0.73
-
-
150
10
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT5200
VFT5200
Typical thermal resistance
RθJC
3.5
7.0
VBT5200
3.5
VIT5200
3.5
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AC
VT5200-E3/4W
1.82
ITO-220AC
VFT5200-E3/4W
1.65
TO-263AB
VBT5200-E3/4W
1.36
TO-263AB
VBT5200-E3/8W
1.36
TO-262AA
VIT5200-E3/4W
1.44
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
6
Resistive or Inductive Load
5
V(B,I)T5200
4
VFT5200
3
2
1
Mounted on Specific Heatsink
0
0
25
50
75
100 125 150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
4.8
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
D = 0.5
D = 0.3
D = 0.8
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T tp
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89176
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 09-Dec-09
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