LESHAN RADIO COMPANY, LTD.
MMBT5088LT1 PNP MMBT5089LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC=100µAdc,VCE=5.0Vdc)
(IC=1.0mAdc,V CE=5.0Vdc)
(IC = 10mAdc, VCE=5.0Vdc)
Collector–Emitter Saturation Voltage
(IC=10mAdc,IB=1.0mAdc)
Base–Emitter Saturation Voltage
(IC =10mAdc,IB=1.0mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC= 500 µAdc,VCE=5.0Vdc,f=20MHz)
Collector–Base Capacitance
(VCB=5.0Vdc,IE=0,f=1.0MHz emitter guarded)
Emitter–Base Capacitance
(VEB=0.5Vdc,IC=0,f=1.0MHz collector guarded)
Small Signal Current Gain
(IC=1.0mAdc,VCE=5.0Vdc,f=1.0kHz)
Noise Figure
(IC=100µAdc,VCE=5.0Vdc, RS=10κΩ,f=1.0kHz)
Symbol
Min
hFE
MMBT5088
300
MMBT5089
400
MMBT5088
350
MMBT5089
450
MMBT5088
300
MMBT5089
400
VCE(sat)
—
VBE(sat)
—
fT
50
C cb
—
C eb
—
h fe
MMBT5088
350
MMBT5089
450
NF
MMBT5088
—
MMBT5089
—
Max
900
1200
—
—
—
—
0.5
0.8
—
4.0
10
1400
1800
3.0
2.0
Unit
—
Vdc
Vdc
MHz
pF
pF
—
dB
RS
~
in
en
IDEAL
TRANSISTOR
Figure 1.Transistor Noise Model
M18–2/4