BUX12 查看數據表（PDF） - Inchange Semiconductor
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BUX12 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX12
DESCRIPTION
·Low Collector Saturation Voltage-
·High Switching Speed
·High Current Current Capability
APPLICATIONS
·Power switching circuits
·Motor control
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VCEX
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
300
V
300
V
250
V
7
V
20
A
25
A
4
A
150
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.17 ℃/W
isc Website：www.iscsemi.cn
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