BUX12 查看數據表（PDF） - Inchange Semiconductor
零件编号
产品描述 (功能)
生产厂家
BUX12 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX12
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
250
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A ;IB= 1.25A
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 200V; IB= 0
VCE= 300V;VBE= -1.5V
VCE= 300V;VBE= -1.5V;TC=125℃
VEB= 5V; IC= 0
1.0
V
1.5
V
1.5
V
1.5 mA
1.5
6.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 5A ; VCE= 4V
20
60
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
10
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 15V, ftest= 10MHz
8
Switching Times
MHz
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 10A ;IB1= 1.25A; VCC= 150V
IC= 10A ;IB1= -IB2= 1.25A;
VCC= 150V
1.0 μs
2.0 μs
0.5 μs
isc Website：www.iscsemi.cn
Share Link: 