Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.8A
VBE(sat) Base-emitter saturation voltage
IC=3A; IB=0.8A
ICBO
Collector cut-off current
hFE
DC current gain
fT
Transition freuqency
VCB=500V; IE=0
IC=0.5A ; VCE=5V
IC=0.1A ; VCE=10V;f=1MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
VF
Diode forward voltage
IF=3.5A
tf
Fall time
IC=3A;IB1=0.8A
Product Specification
2SD1426
MIN TYP. MAX UNIT
5
V
8.0
V
1.5
V
10
μA
8
3
MHz
95
pF
2.0
V
1.0
μs
2