BCR30AM-12LB-A8 查看數據表（PDF） - Renesas Electronics
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BCR30AM-12LB-A8
Renesas Electronics
BCR30AM-12LB-A8 Datasheet PDF : 8 Pages
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BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
Tj = 125°C
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140
Tj = 150°C
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=150°C)
102
7
Typical Example
Tj = 150°C
Main Voltage
(dv/dt)c
Time
VD
5 IT = 4A
3 τ = 500µs
2 VD = 200V
Main Current
IT
(di/dt)c
τ Time
f = 3Hz
101
7
III Quadrant
5
I Quadrant
3
Minimum
2
Characteristics
Value
100
7101
23
5 7 102
23
5 7 103
Rate of Decay of On-State
Commutating Current (A/ms)
Commutation Characteristics (Tj=125°C)
102
7
5 Minimum
Characteristics
3 Value
2
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time
VD
(di/dt)c
Time
101
7
5
3
2
100
7101
III Quadrant
I Quadrant
2 3 5 7 102
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
2 3 5 7 103
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
Typical Example
5
IFGT I
4
3
IRGT I
2
IRGT III
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
Gate Current Pulse Width (µs)
REJ03G0472-0300 Rev.3.00 Nov 30, 2007
Page 5 of 7
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