2N2369A 查看數據表（PDF） - STMicroelectronics
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2N2369A Datasheet PDF : 6 Pages
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2N2369A
THERMAL DATA
Rt h j-c ase Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
146
°C/W
Max
486
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
I CBO
ICES
V (BR) CBO
V ( B R ) CE S
V(B R)CEO *
V(BR) EBO
V CE (s at )*
Collector Cutoff
Current (IE = 0)
Collector Cutoff
Current (VB E = 0)
Collector-base
Breakdown Voltage
(IE = 0)
Collector-emitter
Breakdown Voltage
(V BE = 0)
Collector-emitter
Breakdown Voltage
(IB = 0)
Emitter-base
Breakdown Voltage
(IC = 0)
Collector-emitter
Saturation Voltage
VBE (s at ) * Base-emitter
Saturation Voltage
hFE*
DC Current Gain
hFE*
fT
DC Current Gain
Transition Frequency
V CB = 20 V
V CE = 20 V
T amb = 150 °C
IC = 10 µA
40
IC = 10 µA
40
IC = 10 mA
15
IE = 10 µA
IC = 10 mA
IC = 30 mA
IC = 100 mA
IC = 10 mA
T amb = 125 °C
IB = 1 mA
IB = 3 mA
IB = 10 mA
IB = 1 mA
IC = 10 mA
IB = 1 mA
IB = 30 mA
IB = 3 mA
IC = 100 mA IB = 10 mA
IC = 10 mA
IB = 1 mA
T amb = – 55 to 125 °C
IC = 10 mA
IC = 10 mA
IC = 30 mA
IC = 100 mA
VCE = 0.35 V
VCE = 1 V
VCE = 0.4 V
VCE = 1 V
IC = 10 mA
T amb = – 55 °C
VCE = 0.35 V
IC = 10 mA
f = 100 MHz
VCE = 10 V
4.5
0.7
0.59
40
40
30
20
20
500
0.14
0.17
0.28
0.19
0.8
0.9
1.1
63
66
71
50
675
CCB O
Collector-base
Capacitance
IE = 0
f = 1 MHz
VCB = 5 V
2.3
ts **
Storage Time
IC = 10 mA
VCC = 10 V
I B 1 = – I B2 = 10 mA
6
to n ** Turn-on Time
IC = 10 mA
I B 1 = 3 mA
VCC = 3 V
9
to ff**
Turn-off Time
IC = 10 mA
VCC = 3 V
13
I B 1 = 3 mA
I B2 = – 1.5 mA
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Max.
30
0.4
0.2
0.25
0.5
0.3
0.85
1.15
1.6
1.02
120
120
4
13
12
18
Unit
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
MHz
pF
ns
ns
ns
2/6
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