BAS40-06LT1(2004) 查看數據表（PDF） - ON Semiconductor
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BAS40-06LT1 Datasheet PDF : 4 Pages
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BAS40−06LT1
Preferred Device
Common Anode Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand held and portable
applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
VR
THERMAL CHARACTERISTICS
40
V
Characteristic
Symbol Max
Unit
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
225
mW
1.8
mW/°C
Operating Junction and Storage
Temperature Range
TJ, Tstg
−55 to
°C
+150
Forward Continuous Current
IFM
120
mA
Single Forward Current
t v 1 s IFSM
200
mA
t v 10 ms
600
Thermal Resistance
Junction−to−Ambient
RqJA
508
(Note 1)
311
(Note 2)
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
http://onsemi.com
40 VOLTS
SCHOTTKY BARRIER DIODE
MARKING
3
DIAGRAM
1
2
SOT−23 (TO−236AB)
CASE 318
Style 12
L2 D
L2
= Specific Device Code
D
= Date Code
ANODE
3
CATHODE
1
2
CATHODE
ORDERING INFORMATION
Device
Package
Shipping†
BAS40−06LT1 SOT−23 3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
March, 2004 − Rev. 5
Publication Order Number:
BAS40−06LT1/D
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