2SD743A 查看數據表（PDF） - Inchange Semiconductor
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2SD743A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD743 2SD743A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD743
2SD743A
IC=10mA; IB=0
V(BR)CBO Collector-base breakdown voltage IC=1.0mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1.0mA; IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.3A
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=5V;f=1.0MHz
hFE-2 Classifications
S
R
Q
40-80 60-120 100-200
MIN TYP. MAX UNIT
80
V
100
100
V
5
V
2.0
V
2.0
V
10
μA
10
μA
20
40
200
10
MHz
2
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