IRF830B 查看數據表（PDF） - Vishay Semiconductors
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IRF830B Datasheet PDF : 8 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF830B
Vishay Siliconix
12
TOP 15 V
14 V
13 V
12 V
9
11 V
10 V
9V
TJ = 25 °C
6
8V
3
7V
6V
0
0
5
10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
8
TOP 15 V
14 V
13 V
12 V
6
11 V
10 V
9.0 V
8.0 V
7.0 V
4
6.0 V
5.0 V
TJ = 150 °C
2
3
ID = 2.5 A
2.5
2
1.5
1
VGS = 10 V
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
1000
100
10
Ciss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Crss
0
0
5
10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
1
0
100
200
300
400
500
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
12
24
VDS = 400 V
20
VDS = 250 V
VDS = 100 V
9
16
6
12
3 TJ = 150 °C
TJ = 25 °C
0
0
5
10
15
20
25
VGS, Gate-to-Source Voltage (V)
8
4
0
0
3
6
9
12
15
18
Qg, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0109-Rev. B, 25-Jan-16
3
Document Number: 91520
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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