KSC1173
NPN Epitaxial Silicon Transistor
Features
• Low Frequency Power Amplifier, Power Regulator
• Collector Current : IC=3A
• Collector Dissipation : PC=10W (TC=25°C)
• Complement to KSA473
August 2009
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
BVCBO
Collector-Base Voltage
30
V
BVCEO
Collector-Emitter Voltage
30
V
BVEBO
Emitter-Base Voltage
5
V
IC
Collector Current
3
A
PC
Collector Dissipation (TC=25°C)
10
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2009 Fairchild Semiconductor Corporation
KSC1173 Rev. A2
1
www.fairchildsemi.com