Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
HSDL-4400 查看數據表(PDF) - HP => Agilent Technologies
零件编号
产品描述 (功能)
生产厂家
HSDL-4400
High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package
HP => Agilent Technologies
HSDL-4400 Datasheet PDF : 19 Pages
First
Prev
11
12
13
14
15
16
17
18
19
14
HSDL-54xx Optical Characteristics at T
A
= 25
°
C
Parameter
Symbol Min. Typ. Max.
Photocurrent
HSDL-5400
HSDL-5420
I
PH
0.8 1.6
3.0 6.0
Temperature Coefficient
∆
I
PH
/
∆
T
0.1
of I
PH
Radiant Sensitive Area
A
0.15
Absolute Spectral Sensitivity
S
0.5
Viewing Angle
HSDL-5400
HSDL-5420
Wavelength of Peak
Sensitivity
Spectral Bandwidth
Quantum Efficiency
2
θ
1/2
λ
PK
∆λ
η
110
28
875
770-
1000
70
Noise Equivalent Power
NEP
Detectivity
D
Optical Rise and Fall Times,
t
r
/t
f
10%-90%
Bandwidth
f
c
6.2 x
10
-15
6.3 x
10
12
7.5
50
Unit
µ
A
%/K
mm
2
A/W
Condition
E
e
= 1 mW/cm
2
λ
PK
= 875 nm
V
R
= 5 V
E
e
= 1 mW/cm
2
λ
PK
= 875 nm
V
R
= 5 V
E
e
= 1 mW/cm
2
λ
PK
= 875 nm
V
R
= 5 V
deg
nm
nm
%
W/ Hz
1/2
cm*
Hz
1/2
/W
ns
MHz
E
e
= 1 mW/cm
2
V
R
= 5 V
E
e
= 1 mW/cm
2
V
R
= 5 V
E
e
= 1 mW/cm
2
λ
PK
= 875 nm,
V
R
= 5 V
V
R
= 5 V
λ
PK
= 875 nm
V
R
= 5 V
λ
PK
= 875 nm
V
R
= 5 V
R
L
= 1 k
Ω
λ
PK
= 875 nm
V
R
= 5 V
R
L
= 1 k
Ω
λ
PK
= 875 nm
Ref.
Fig. 14,
15
Fig. 13
Fig. 18
Fig. 19
Fig. 17
Fig. 17
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]