IDT7007S15JI8 查看數據表（PDF） - Integrated Device Technology
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IDT7007S15JI8 Datasheet PDF : 22 Pages
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IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs(1)
Outputs
CE
R/W
OE
SEM
I/O0-7
H
X
X
H
High-Z Deselected: Power-Down
Mode
L
L
X
H
DATAIN Write to Memory
L
H
L
H
DATAOUT Read Memory
X
X
H
X
High-Z Outputs Disabled
NOTE:
1. A0L — A14L ≠ A0R — A14R
2940 tbl 02
Truth Table II: Semaphore Read/Write Control(1)
Inputs
Outputs
CE
R/W
OE
SEM
I/O0-7
Mode
H
H
L
L
DATAOUT Read Semap hore Flag Data Out (I/O0-I/O7)
H
↑
X
L
DATAIN Write I/O0 into Semaphore Flag
L
X
X
L
______
Not Allowed
NOTE:
1. There are eight semaphore flags written to via I/O0 and read from all I/O's. These eight semaphores are addressed by A0 - A2.
2940 tbl 03
Absolute Maximum Ratings(1)
Symbol
Rating
Commercial
& Industrial
Military Unit
VTERM(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0 -0.5 to +7.0 V
TBIAS
Temperature
Under Bias
-55 to +125 -65 to +135 oC
TSTG
Storage
Temperature
-65 to +150 -65 to +150 oC
IOUT
DC Output
Current
50
50
mA
Maximum Operating Temperature
and Supply Voltage(1)
Grade
Ambient
Temperature
GND
Vcc
Military
-55OC to+125OC
0V
5.0V + 10%
Commercial
0OC to +70OC
0V
5.0V + 10%
Industrial
-40OC to +85OC
0V
5.0V + 10%
NOTES:
2940 tbl 05
1. This is the parameter TA. This is the "instant on" case temperature.
NOTES:
2940 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
Recommended DC Operating
Conditions
indicated in the operational sec-tions of this specification is not implied. Exposure
to absolute maxi-mum rating conditions for extended periods may affect
Symbol
Parameter
Min. Typ. Max. Unit
reliability.
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
VCC Supply Voltage
4.5 5.0 5.5 V
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
GND Ground
0
0
0
V
Capacitance (TA = +25°C, f = 1.0Mhz)
Symbol
Parameter(1)
Conditions(2) Max. Unit
CIN Input Capacitance
VIN = 3dV
9
pF
COUT Output Capacitance
VOUT = 3dV
10
pF
VIH Input High Voltage
2.2
____
6.0(2)
V
VIL Input Low Voltage
-0.5(1)
____
0.8
V
NOTES:
1. VIL > -1.5V for pulse width less than 10ns.
2. VTERM must not exceed Vcc + 10%.
2940 tbl 06
NOTES:
2940 tbl 07
1. This parameter is determined by device characterization but is not production
tested. TQFP package only.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
5
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