MDS800 查看數據表（PDF） - Advanced Power Technology

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MDS800

800 Watts, 50 Volts Pulsed Avionics at 1090 MHz

Advanced Power Technology  

MDS800

800 Watts, 50 Volts

Pulsed Avionics at 1090 MHz

GENERAL DESCRIPTION

The MDS800 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems at 1090 MHz, with the pulse width and duty

required for MODE-S applications. The device has gold thin-film metalization

and emitter ballasting for proven highest MTTF. The transistor includes input

and output prematch for broadband capability. Low thermal resistance package

reduces junction temperature, extends life.

CASE OUTLINE

55ST-1

(Common Base)

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25°C1

1458 W

Maximum Voltage and Current

Collector to Base Voltage (BVces)

Emitter to Base Voltage (BVebo)

Collector Current (Ic)

Maximum Temperatures

60 V

3.5 V

60 A

Storage Temperature

-65 to +200 °C

Operating Junction Temperature +200 °C

ELECTRICAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

Pout

Pin

Pg

ηc

RL

Pd

VSWR

Power Output

Power Input

Power Gain

Collector Efficiency

Return Loss

Power Droop

Load Mismatch Tolerance1

TEST CONDITIONS

F = 1090 MHz

Vcc = 50 Volts

Burst width = 128µs

LTDF = 2%

F = 1090 MHz

FUNCTIONAL CHARACTERISTICS @ 25°C

BVebo

BVces

hFE

θjc1

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC – Current Gain

Thermal Resistance

Ie = 30 mA

Ic = 50 mA

Vce = 5V, Ic = 1A

NOTES: 1. At rated output power and pulse conditions

2. 128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period

Rev. B– Dec 2005

MIN TYP MAX UNITS

800

W

110

8.6

dB

40

%

-12 dB

0.5

dB

4.0:1

3.5

V

65

V

20

0.12 °C/W

Advanced Power Technology reserves the right to change, without notice, the specifications and information

contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.

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