MBR10100CT 查看數據表（PDF） - Vishay Semiconductors
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MBR10100CT Datasheet PDF : 4 Pages
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MBR1090CT & MBR10100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL MBR1090CT MBR10100CT
Maximum instantaneous forward voltage per diode (1)
IF = 5.0 A
IF = 5.0 A
TC = 125 °C
TC = 25 °C
VF
0.75
0.85
Maximum reverse current per diode at working peak
reverse voltage (1)
TJ = 25 °C
TJ = 100 °C
IR
100
6.0
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
UNIT
V
µA
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR1090CT MBR10100CT
Typical thermal resistance per diode
RθJC
4.4
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
MBR10100CT-E3/45
1.85
PACKAGE CODE
45
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
Resistive or Inductive Load
8
6
4
2
0
0
50
100
150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
120
TJ = TJ Max.
100
8.3 ms Single Half Sine-Wave
80
60
40
20
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88666
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 07-May-08
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