MBR10100CT 查看數據表（PDF） - Vishay Semiconductors
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MBR10100CT Datasheet PDF : 4 Pages
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MBR1090CT & MBR10100CT
Vishay General Semiconductor
100
TJ = 150 °C
10
TJ = 175 °C
1
TJ = 25 °C
TJ = 100 °C
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
10
1
0.1
0.01
0.1
1
10
t - Pulse Duration (s)
Figure 5. Typical Transient Thermal Impedance Per Diode
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
0.001
TJ = 25 °C
0.0001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
1000
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
TO-220AB
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.160 (4.06)
0.140 (3.56)
PIN
123
0.635 (16.13)
0.625 (15.87)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
Document Number: 88666 For technical questions within your region, please contact one of the following:
Revision: 07-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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