MS8350-P2819 查看數據表（PDF） - Microsemi Corporation
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MS8350-P2819 Datasheet PDF : 2 Pages
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TM
P2819
GaAs Schottky Diodes
®
Low RS Series Pair
MS8350 – P2819
DIM
A
B
C
D
E
F
G
H
J
INCHES
MIN.
MAX.
0.0275
0.0285
0.0185
0.0195
0.0046
0.0056
0.0046
0.0056
0.0195
0.0205
0.0050
0.0060
0.0045
0.0055
0.0105
0.0115
0.0095
0.0105
MM
MIN.
MAX.
0.698
0.724
0.470
0.495
0.117
0.142
0.117
0.142
0.495
0.521
0.127
0.152
0.114
0.140
0.267
0.292
0.241
0.267
Spice Model Parameters (Per Junction)
IS
RS
A
N
TT
CJ0
CP
M
EG
VJ
Sec
pF
pF
eV
V
3.2 x10-13
3
1
0
0.045
0.02
0.50
1.42
0.85
BV
IBV
V
A
4
1 x 10-5
Copyright 2008
Rev: 2009-05-11
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
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