FCP11N60N 查看數據表（PDF） - Fairchild Semiconductor
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FCP11N60N Datasheet PDF : 10 Pages
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Package Marking and Ordering Information
Device Marking
FCP11N60N
FCPF11N60NT
Device
FCP11N60N
FCPF11N60NT
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 1mA, VGS = 0V, TC = 25oC
600
ID = 1mA, Referenced to 25oC
-
VDS = 480V, VGS = 0V
-
VDS = 480V, VGS = 0V, TC = 125oC
-
VGS = ±30V, VDS = 0V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
2.0
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 5.4A
-
gFS
Forward Transconductance
VDS = 40V, ID = 5.4A
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Cosseff.
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
-
VDS = 100V, VGS = 0V
f = 1MHz
-
-
VDS = 380V, VGS = 0V, f = 1MHz
-
VDS = 0V to 480V, VGS = 0V
-
-
VDS = 380V, ID = 5.4A,
VGS = 10V
-
(Note 4)
-
Drain Open
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380V, ID = 5.4A
RG = 4.7Ω
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 5.4A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 5.4A
dIF/dt = 100A/μs
-
-
-
(Note 4)
-
-
-
-
-
-
Typ. Max. Units
-
0.73
-
V
-
V/oC
-
10
μA
-
100
-
±100 nA
-
4.0
V
0.255 0.299 Ω
13.5
-
S
1130 1505 pF
45
60
pF
3
5
pF
25
-
pF
130
-
pF
27.4 35.6 nC
4.9
-
nC
8.8
-
nC
2.0
Ω
13.6 37.2 ns
9.1
28.2 ns
42.0 94.0 ns
10.0 30.0 ns
-
10.8
A
-
32.4
A
-
1.2
V
268
-
ns
3.1
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 3.7A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 10.8A, di/dt ≤ 200A/μs, VDD = 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCP11N60N / FCPF11N60NT Rev. A
2
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