IRFP3710PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 V VGS = 0V, ID = 250µA
0.12 V/°C Reference to 25°C, ID = 1mA
0.025 Ω VGS = 10V, ID = 28A
2.0 4.0 V VDS = VGS, ID = 250µA
20 S VDS = 25V, ID = 28A
25
250
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
100 n A VGS = 20V
-100
VGS = -20V
190
ID = 28A
26 nC VDS = 80V
82
VGS = 10V, See Fig. 6 and 13
14
VDD = 50V
59
58
ns
ID = 28A
RG = 2.5Ω
48
RD = 1.7Ω, See Fig. 10
4.5
Between lead,
D
6mm (0.25in.)
nH from package
G
7.5
and center of die contact
S
3000
VGS = 0V
640 pF VDS = 25V
330
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
57
MOSFET symbol
A showing the
D
integral reverse
G
180
p-n junction diode.
S
1.3
210 320
1.7 2.6
V TJ = 25°C, IS = 28A, VGS = 0V
ns TJ = 25°C, IF = 28A
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.4mH
RG = 25Ω, IAS = 28A. (See Figure 12)
ISD ≤ 28A, di/dt ≤ 460A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.