STD100NH02L-1(2003) 查看數據表（PDF） - STMicroelectronics

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STD100NH02L-1
(Rev.:2003)

N-CHANNEL 24V - 0.0042 Ω - 60A DPAK/IPAK STripFET™ III POWER MOSFET

STMicroelectronics 

STD100NH02L

N-CHANNEL 24V - 0.0042 Ω - 60A DPAK/IPAK

STripFET™ III POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STD100NH02L

24 V < 0.0048 Ω 60 A(2)

s TYPICAL RDS(on) = 0.0042 Ω @ 10 V

s TYPICAL RDS(on) = 0.005 Ω @ 5 V

s RDS(ON) * Qg INDUSTRY’s BENCHMARK

s CONDUCTION LOSSES REDUCED

s SWITCHING LOSSES REDUCED

s LOW THRESHOLD DEVICE

s THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

s SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

The STD100NH02L utilizes the latest advanced design

rules of ST’s proprietary STripFET™ technology. This is

suitable fot the most demanding DC-DC converter

application where high efficiency is to be achieved.

APPLICATIONS

s SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC CONVERTES

3

2

1

IPAK

TO-251

(Suffix “-1”)

3

1

DPAK

TO-252

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

Ordering Information

SALES TYPE

STD100NH02LT4

STD100NH02L-1

MARKING

D100NH02L

D100NH02L

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Vspike(1)

VDS

VDGR

VGS

ID(2)

ID(2)

IDM(3)

Ptot

Drain-source Voltage Rating

Drain-source Voltage (VGS = 0)

Drain-gate Voltage (RGS = 20 kΩ)

Gate- source Voltage

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

Drain Current (pulsed)

Total Dissipation at TC = 25°C

Derating Factor

EAS (4)

Tstg

Tj

Single Pulse Avalanche Energy

Storage Temperature

Max. Operating Junction Temperature

September 2003

PACKAGE

TO-252

TO-251

Value

30

24

24

± 20

60

60

240

100

0.67

800

-55 to 175

PACKAGING

TAPE & REEL

TUBE

Unit

V

V

V

V

A

A

A

W

W/°C

mJ

°C

1/12

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