STD100NH02L(2003) 查看數據表（PDF） - STMicroelectronics

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STD100NH02L
(Rev.:2003)

N-CHANNEL 24V - 0.0042 Ω - 60A DPAK/IPAK STripFET™ III POWER MOSFET

STMicroelectronics 

STD100NH02L

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

1.5

Rthj-amb Thermal Resistance Junction-ambient

Max

100

Tl

Maximum Lead Temperature For Soldering Purpose

275

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 25 mA, VGS = 0

24

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = 20 V

VDS = 20 V TC = 125°C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100

nA

ON (5)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

VGS = 5 V

ID = 30 A

ID = 15 A

Min.

1

Typ. Max.

1.8

0.0042 0.0048

0.005 0.009

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (5)

Ciss

Coss

Crss

RG

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Gate Input Resistance

Test Conditions

VDS = 10 V

ID = 30 A

VDS = 15V f = 1 MHz VGS = 0

Min.

f = 1 MHz Gate DC Bias = 0

Test Signal Level = 20 mV

Open Drain

Typ.

50

3940

1020

110

1.1

Max.

Unit

S

pF

pF

pF

Ω

2/12

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