MCRF200 查看數據表（PDF） - Microchip Technology

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MCRF200

125 kHz microID Passive RFID Device

Microchip Technology 

MCRF200

TABLE 5-3: DIE MECHANICAL DIMENSIONS

Specifications

Min

Typ

Max Unit

Comments

Bond pad opening

—

3.5 x 3.5

—

mil Note 1, Note 2

—

89 x 89

—

µm

Die backgrind thickness

—

7

—

mil Sawed 6” wafer on frame

—

177.8

—

µm (option = WF) Note 3

—

11

—

mil Unsawed wafer

—

279.4

—

µm (option = W) Note 3

Die backgrind thickness tolerance

—

—

±1

mil

—

—

±25.4 µm

Die passivation thickness (multilayer)

—

0.9050

—

µm Note 4

Die Size:

Die size X*Y before saw (step size)

Die size X*Y after saw

— 44.15 x 68.44 —

— 42.58 x 66.87 —

mil —

mil —

Note 1: The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at

least 0.1 mil.

2: Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu.

3: As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as

thick as the application will allow.

4: The Die Passivation thickness (0.905 µm) can vary by device depending on the mask set used. The

passivation is formed by:

-Layer 1: Oxide (undoped oxide 0.135 µm)

-Layer 2: PSG (doped oxide, 0.43 µm)

-Layer 3: Oxynitride (top layer, 0.34 µm)

5: The conversion rate is 25.4 µm/mil.

Notice: Extreme care is urged in the handling and assembly of die products since they are susceptible to

mechanical and electrostatic damage.

TABLE 5-4: WAFER MECHANICAL SPECIFICATIONS

Specifications

Min

Typ

Max

Wafer Diameter

Die separation line width

Dice per wafer

Batch size

—

8

—

—

80

—

—

14,000

—

—

24

—

Unit

Comments

inch

µm

die

wafer

150 mm

DS21219H-page 12

 2003 Microchip Technology Inc.

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