2SK3570 查看數據表（PDF） - NEC => Renesas Technology
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2SK3570 Datasheet PDF : 8 Pages
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5 PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
10.6 MAX.
10.0 TYP.
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
2SK3570
2) TO-262 (MP-25 Fin Cut)
10 TYP.
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3) TO-263 (MP-25ZK)
No plating
10.0±0.2
0.4
8.4 TYP.
4
4.45±0.2
1.3±0.2
0.025 to
0.25
0.7±0.15
2.54
123
0.5±0.2
0 to 8 o
0.25
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4) TO-220SMD (MP-25Z) Note
10 TYP.
4
4.8 MAX.
1.3±0.2
123
1.4±0.2
0.75±0.3
2.54 TYP.
2.54 TYP0..50R.8TRYPT.YP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used, an
additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Gate
Protection
Diode
Source
6
Data Sheet D16256EJ2V0DS
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