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L5150GJ 查看數據表(PDF) - STMicroelectronics

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产品描述 (功能)
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L5150GJ
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L5150GJ Datasheet PDF : 29 Pages
First Prev 21 22 23 24 25 26 27 28 29
Revision history
6
Revision history
L5150GJ
Table 11. Document revision history
Date
Revision
Changes
09-Aug-2007
1
Initial release.
06-Mar-2008
09-May-2008
13-Oct-2008
Modified Description on cover page.
Updated Table 5.: General:
– changed Vo_ref, Vline, Vload test conditions
– added notes to Ilim and Vdp parameters
– added Ioth_H, Ioth_L, Ioth parameters.
Updated Table 6.: Reset:
2
– added VRes_adj parameter
– changed VRlth values (min./ typ./ max.) from 17/20/23 to 20/23/26
(% Vo_ref).
Updated Table 8.: Enable:
– changed VEn_hyst typ. value from 800 mV to 500 mV
– changed I_leak typ. value from 3 µA to 1.8 µA.
Modified Section 3.2: Reset.
Updated Table 5.: General :
– changed Ilim values (Min./Typ./Max.) from 0.7/1/1.30 A to
3
280/470/660 mA.
– Vo_ref parameter : updated Io test condition
Old -> Io= 0.1 mA to I0mA
New -> Io= 0.1 mA to 8 mA.
Updated Table 5.: General :
4
– Vload parameter : updated Io test condition
Old -> Io= 5 mA to I50 mA
New -> Io= 8 mA to 150 mA
26/29
Doc ID 15540 Rev. 12

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