STU10P6F6 查看數據表（PDF） - STMicroelectronics

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STU10P6F6

P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = -5 A, VGS = 0 V

ISD = -10 A,

di/dt = -100 A/µs,

VDD = -48 V

(see Figure 17)

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

-10 A

-

-40 A

-

-1.1 V

-

20

ns

- 17.8

nC

- -1.8

A

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