A28F010 查看數據表（PDF） - Intel

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A28F010

1024K (128K x 8) CMOS FLASH MEMORY

Intel 

A28F010

DC CHARACTERISTICS TTL NMOS COMPATIBLE (Continued)

Symbol

Parameter

Notes

Limits

Unit

Min Typical Max

Test Conditions

IPP2 VPP Programming Current

12

80

30

mA VPP e VPPH

Programming in Progress

IPP3 VPP Erase Current

12

40

30

mA VPP e VPPH

Erasure in Progress

IPP4 VPP Program Verify Current

12

20

5 0 mA VPP e VPPH

Program Verify in Progress

IPP5 VPP Erase Verify Current

12

20

5 0 mA VPP e VPPH

Erase Verify in Progress

VIL

Input Low Voltage

b0 5

08

V

VIH Input High Voltage

20

VCC a 0 5 V

VOL Output Low Voltage

0 45

V IOL e 2 1 mA

VCC e VCC Min

VOH1 Output High Voltage

24

V IOH e b2 5 mA

VCC e VCC Min

VID A9 Intelligent Identifer Voltage

11 50

13 00 V A9 e VID

IID

VCC ID Current

VPP ID CURRENT

1

10

30

mA A9 e VID

90

500 mA

VPPL VPP during Read-Only Operations

0 00

65

V NOTE Erase Program are

Inhibited when VPP e VPPL

VPPH VPP during Read Write Operations

11 40

12 60 V

VLKO VCC Erase Write Lock Voltage

25

V

DC CHARACTERISTICS CMOS COMPATIBLE

Symbol

Parameter

Notes

Limits

Unit

Min Typical Max

Test Conditions

ILI

ILO

ICCS

ICC1

ICC2

ICC3

IPPS

IPP1

Input Leakage Current

1

Output Leakage Current

1

VCC Standby Current

1

VCC Active Read Current

1

VCC Programming Current 1 2

VCC Erase Current

12

VPP Leakage Current

1

VPP Read Current or

1

Standby Current

g1 0 mA VCC e VCC Max

VIN e VCC or VSS

g10 mA VCC e VCC Max

VOUT e VCC or VSS

300 mA VCC e VCC Max

CE e VCC g0 2V

10

30 mA VCC e VCC Max CE e VIL

f e 6 MHz IOUT e 0 mA

10

30 mA Programming in Progress

50

30 mA Erasure in Progress

g10 mA VPP s VCC

90

200 mA VPP l VCC

g10

VPP s VCC

14

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