A28F010
DC CHARACTERISTICS TTL NMOS COMPATIBLE (Continued)
Symbol
Parameter
Notes
Limits
Unit
Min Typical Max
Test Conditions
IPP2 VPP Programming Current
12
80
30
mA VPP e VPPH
Programming in Progress
IPP3 VPP Erase Current
12
40
30
mA VPP e VPPH
Erasure in Progress
IPP4 VPP Program Verify Current
12
20
5 0 mA VPP e VPPH
Program Verify in Progress
IPP5 VPP Erase Verify Current
12
20
5 0 mA VPP e VPPH
Erase Verify in Progress
VIL
Input Low Voltage
b0 5
08
V
VIH Input High Voltage
20
VCC a 0 5 V
VOL Output Low Voltage
0 45
V IOL e 2 1 mA
VCC e VCC Min
VOH1 Output High Voltage
24
V IOH e b2 5 mA
VCC e VCC Min
VID A9 Intelligent Identifer Voltage
11 50
13 00 V A9 e VID
IID
VCC ID Current
VPP ID CURRENT
1
10
30
mA A9 e VID
90
500 mA
VPPL VPP during Read-Only Operations
0 00
65
V NOTE Erase Program are
Inhibited when VPP e VPPL
VPPH VPP during Read Write Operations
11 40
12 60 V
VLKO VCC Erase Write Lock Voltage
25
V
DC CHARACTERISTICS CMOS COMPATIBLE
Symbol
Parameter
Notes
Limits
Unit
Min Typical Max
Test Conditions
ILI
ILO
ICCS
ICC1
ICC2
ICC3
IPPS
IPP1
Input Leakage Current
1
Output Leakage Current
1
VCC Standby Current
1
VCC Active Read Current
1
VCC Programming Current 1 2
VCC Erase Current
12
VPP Leakage Current
1
VPP Read Current or
1
Standby Current
g1 0 mA VCC e VCC Max
VIN e VCC or VSS
g10 mA VCC e VCC Max
VOUT e VCC or VSS
300 mA VCC e VCC Max
CE e VCC g0 2V
10
30 mA VCC e VCC Max CE e VIL
f e 6 MHz IOUT e 0 mA
10
30 mA Programming in Progress
50
30 mA Erasure in Progress
g10 mA VPP s VCC
90
200 mA VPP l VCC
g10
VPP s VCC
14