STD11N65M2(2019) 查看數據表（PDF） - STMicroelectronics
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STD11N65M2
(Rev.:2019)
(Rev.:2019)
STMicroelectronics
STD11N65M2 Datasheet PDF : 27 Pages
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STD11N65M2, STP11N65M2, STU11N65M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
ID
Drain current (continuous) at Tcase = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at Tcase = 25 °C
dv/dt (2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Pulse width limited by Tjmax.
2. ISD ≤ 7 A, di/dt ≤ 400 A/μs, VDS (peak) ≤ V(BR)DSS, VDS = 400 V
3. VDS ≤ 520 V.
Value
±25
7
4.4
28
85
15
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on a 1-inch² FR-4, 2 Oz copper board.
DPAK
50
Value
TO-220
1.47
62.5
Unit
IPAK
100
°C/W
Table 3. Avalanche characteristics
Symbol
Parameter
IAR (1)
Avalanche current, repetitive or not repetitive
EAS (2)
Single pulse avalanche energy
1. Pulse width limited by Tjmax.
2. starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Value
Unit
1.5
A
110
mJ
DS10348 - Rev 6
page 2/27
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