A1834 查看數據表（PDF） - ROHM Semiconductor
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A1834 Datasheet PDF : 7 Pages
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2SA1834
Data Sheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
*1 Pw=10ms , single pulse
*2 Mounted on a substrate
*3 Tc=25°C
Symbol
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
PD *3
Tj
Tstg
Values
Unit
-30
V
- 20
V
-6
V
-10
A
-15
A
1
W
10
W
150
°C
-55 to +150
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Collector-emitter
breakdown voltage
BVCEO
Collector-base
breakdown voltage
BVCBO
Emitter-base
breakdown voltage
BVEBO
Conditions
IC = -1mA
IC = -50mA
IE = -50mA
Collector cut-off current
ICBO VCB = -20V
Min. Typ. Max. Unit
-20
-
-
V
-30
-
-
V
-6
-
-
V
-
-
-1
mA
Emitter cut-off current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
DC current gain
Transition frequency
Output capacitance
*4 Pulsed
IEBO VEB = -5V
-
-
-1
mA
VCE(sat) *4 IC = -4A, IB = -0.05A
- -0.16 -0.25 V
VBE(sat) *4 IC = -4A, IB = -0.05A
-
-0.9 -1.2
V
hFE 1 *4 VCE = -2V, IC = -0.5A 180
-
560
-
hFE 2 *4 VCE = -2V, IC = -4A
fT*4
VCE = -5V, IE = 1.5A
f=50MHZ
Cob
VCB = -10V, IE = 0A
f = 1MHz
82
-
-
150
-
220
-
-
-
MHz
-
pF
lhFE rank categories
Rank
R
hFE
180 to 390
S
270 to 560
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2/6
2013.07 - Rev.B
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