BGU7032,115 查看數據表（PDF） - NXP Semiconductors.
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BGU7032,115 Datasheet PDF : 11 Pages
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NXP Semiconductors
BGU7032
1 GHz wideband low-noise amplifier with bypass
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C; typical values at VCC = 5 V; ZS = ZL = 75 Ω; Rbias = 43 Ω; 40 MHz ≤ f1 ≤ 1000 MHz.
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
ICC(tot)
supply voltage
total supply current
RF input AC coupled
Gp = 10 dB mode
bypass mode
4.75 5.0
[1] -
43
[1] -
4
5.25 V
- mA
- mA
Tamb
NF
ambient temperature
noise figure
Gp = 10 dB mode
bypass mode
−10 - +70 °C
[1] -
4.5 -
dB
[1] -
2.5 -
dB
PL(1dB) output power at 1 dB gain
compression
1 GHz; Gp = 10 dB
mode
[1] -
14 -
dBm
IP3O output third-order intercept point Gp = 10 dB mode
[1][2] -
29 -
dBm
[1] Mode depends on setting of VCTRL; see Table 8.
[2] The fundamental frequency (f1) is 1000 MHz. The intermodulation product (IM3) is 2 × f2 − f1, where
f2 = f1 ± 1 MHz. Input power Pi = −10 dBm.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
RF_OUT
VCC
n.c.
CTRL
GND
RF_IN
Simplified outline Graphic symbol
654
32
6
1
123
54
sym141
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BGU7032
-
plastic surface-mounted package; 6 leads
Version
SOT363
4. Marking
Table 4. Marking codes
Type number
BGU7032
Marking code
SD%
Note: % character indicates the location of production.
BGU7032
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 September 2010
© NXP B.V. 2010. All rights reserved.
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