STP10NM50N 查看數據表（PDF） - STMicroelectronics

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STP10NM50N

N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET

STMicroelectronics 

STD10NM50N

STF10NM50N, STP10NM50N

N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220

MDmesh™ II Power MOSFET

Features

Type

VDSS

(@Tjmax)

RDS(on)

max

ID

STD10NM50N

STF10NM50N

STP10NM50N

550 V

< 0.63 Ω 7 A

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Applications

■ Switching applications

Description

These devices are N-channel Power MOSFETs

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

TAB

3

1

DPAK

TAB

3

2

1

TO-220FP

3

2

1

TO-220

Figure 1. Internal schematic diagram

$4!"

'

3

!-V

Table 1. Device summary

Order codes

STD10NM50N

STF10NM50N

STP10NM50N

Marking

10NM50N

Packages

DPAK

TO-220FP

TO-220

Packaging

Tape and reel

Tube

October 2011

Doc ID 16929 Rev 3

1/18

www.st.com

18

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