FQD19N10L 查看數據表（PDF） - Fairchild Semiconductor
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FQD19N10L Datasheet PDF : 9 Pages
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Typical Characteristics
V
GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
101
3.5 V
Bottom : 3.0 V
100
10-1
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.30
0.24
VGS = 5V
0.18
V = 10V
GS
0.12
0.06
0.00
0
※ Note : T = 25℃
J
15
30
45
60
75
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1800
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1200
900
600
300
C
iss
C
oss
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
150℃
100
25℃
-55℃
10-1
0
※ Notes :
1. VDS = 30V
2. 250μs Pulse Test
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 50V
DS
8
V = 80V
DS
6
4
2
※ Note : ID = 19A
0
0
5
10
15
20
25
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, August 2000
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